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Fairchild Semiconductor |
PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from Process 5P. • NZT751 for characteristics. 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25°C unless |
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Inchange Semiconductor |
Silicon PNP Power Transistors l Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI |
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GE |
PNP POWER TRANSISTORS • PNP complement to D44C NPN • Very Low collector saturation voltage (-0.5Vtyp. @-3.0AIe) • Excellent linearity • Fast Switching PNP COLLECTOR ~'-EQ EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - ..~~g\!.~~\~ .. 1 ..O0S48S1(11..3~92 |
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