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D45C11

Part Number	D45C11
Manufacturer	Fairchild Semiconductor
Description	PNP Current Driver Transistor
Published	Mar 27, 2005
Detailed Description	D45C11 — PNP Current Driver Transistor D45C11 PNP Current Driver Transistor January 2010 Features • This device is de...
Datasheet	D45C11 PDF File

Overview

D45C11 — PNP Current Driver Transistor D45C11 PNP Current Driver Transistor January 2010 Features • This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from Process 5P.
• NZT751 for characteristics.
1 TO-220 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 V -4.
0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max.
60 480 2.
1 62.
5 Units W mW/°C °C/W °C/W © 2009 Fairchild Semiconductor Corporation D45C11 Rev.
B2 1 www.
fairchildsemi.
com D45C11 — PNP Current Driver Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Cutoff Current VCE = -90V, IE = 0 IEBO Emitter-Cutoff Current VEB = -5.
0V, IB = 0 On Characteristics hFE DC Current Gain VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics VCE = -1.
0V, IC = -0.
2A VCE = -1.
0V, IC = -1.
0A IC = -1.
0A, IB = -50mA IC = -1.
0A, IB = -100mA Cob Output Capacitance VCB = -10V, f = 1.
0MHz fT Current Gain - Bandwidth Product IC = -20mA, VCE = -4.
0V Min.
-80 40 20 32 Max.
-10 -100 120 -0.
5 -1.
3 125 Units V μA μA V V pF ...

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