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D45C11

Part Number	D45C11
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Jul 28, 2016
Detailed Description	isc Silicon PNP Power Transistors D45C11 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Sp...
Datasheet	D45C11 PDF File

Overview

isc Silicon PNP Power Transistors D45C11 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.
0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Therma...

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