matched dual n-channel JFETs
H
Siliconix
designed for • • •
Performance Curves NCB-D See Sedion 4
• Wideband Differential
Amplifiers
• Commutators
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Gate
Voltage .
±80V
Gate-Drain or Gate-Source
Voltage •.
.
•••.
.
.
-40 V Gate Current •.
•••.
•.
••.
•.
•.
.
•.
••.
.
50 rnA Device Dissipation (Each Side), TA = 25°C
(Derate 2.
2 mW/oC) .
.
•.
.
.
••.
.
•.
.
.
.
•.
•.
••.
• 325mW
Total Device Dissipation, TA = 25°C (Derate 3.
3 mW/oC) •.
••.
.
•••••••.
•.
•.
•.
.
•.
650mW
Storage Temperature Range •••.
•.
.
••.
.
.
.
• -65 to +200°C
Lead Temperature (1/16" from case for 10 seconds) .
.
.
•.
300°C
BENEFITS
• High Gain 7500 tLmho Minimum gfs
• Specified ...