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DN5566

Part Number	DN5566
Manufacturer	Siliconix
Description	dual n-channel JFET
Published	Sep 24, 2019
Detailed Description	matched dual n-channel JFETs H Siliconix designed for • • • Performance Curves NCB-D See Sedion 4 • Wideband Differe...
Datasheet	DN5566 PDF File

Overview

matched dual n-channel JFETs H Siliconix designed for • • • Performance Curves NCB-D See Sedion 4 • Wideband Differential Amplifiers • Commutators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .
±80V Gate-Drain or Gate-Source Voltage •.
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-40 V Gate Current •.
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50 rnA Device Dissipation (Each Side), TA = 25°C (Derate 2.
2 mW/oC) .
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• 325mW Total Device Dissipation, TA = 25°C (Derate 3.
3 mW/oC) •.
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650mW Storage Temperature Range •••.
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• -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) .
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300°C BENEFITS • High Gain 7500 tLmho Minimum gfs • Specified ...

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