FCI25N60N — N-Channel SupreMOS®
MOSFET
FCI25N60N
N-Channel SupreMOS®
MOSFET
600 V, 25 A, 125 mΩ
November 2013
Features
• RDS(on) = 107 mΩ (Typ.
) @ VGS = 10 V, ID = 12.
5 A • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 262 pF) • 100% Avalanche Tested • RoHS Compliant
Application
• Solar Inverter • AC-DC Power Supply
Description
The SupreMOS®
MOSFET is Fairchild Semiconductor’s next generation of high
voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ
MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching p...