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FCI25N60N_F102

Fairchild Semiconductor
Part Number FCI25N60N_F102
Manufacturer Fairchild Semiconductor
Description N-Channel SupreMOS MOSFET
Published Oct 18, 2015
Detailed Description FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features • R...
Datasheet PDF File FCI25N60N_F102 PDF File

FCI25N60N_F102
FCI25N60N_F102

Overview
FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features • RDS(on) = 107 mΩ (Typ.
)@ VGS = 10 V, ID = 12.
5 A • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss.
eff = 262 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.
This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance a...


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