FCP104N60 — N-Channel SuperFET® II
MOSFET
FCP104N60
N-Channel SuperFET® II
MOSFET
600 V, 37 A, 104 mΩ
June 2014
Features
• 650 V @ TJ = 150°C • Typ.
RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ.
Qg = 63 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 280 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• Telecom / Sever Power Supplies • Industrial Power Supplies
Description
SuperFET® II
MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superio...