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FCP104N60F

INCHANGE
Part Number FCP104N60F
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP104N60F ·FEATURES ·Static drain-source on-resistance: RDS(on...
Datasheet PDF File FCP104N60F PDF File

FCP104N60F
FCP104N60F

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP104N60F ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤104mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Lighting ·AC-DC Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 37 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 350 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel...


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