FDD8874 / FDU8874
March 2015
FDD8874 / FDU8874
N-Channel PowerTrench®
MOSFET 30V, 116A, 5.
1mΩ
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.
1mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.
4mΩ, VGS = 4.
5V, ID = 35A • High performance trench technology for extremely low
rDS(ON) • Low gate charge • High power and current handling capability
• RoHS Compliant
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
MOSFET Maxi...