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FDD8874

Part Number	FDD8874
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	May 15, 2021
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 116A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Stat...
Datasheet	FDD8874 PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 116A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.
1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 116 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 110 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storag...

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