FDMC86520L N-Channel PowerTrench®
MOSFET
August 2011
FDMC86520L
N-Channel Power Trench®
MOSFET
60 V, 22 A, 7.
9 mΩ Features General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Max rDS(on) = 7.
9 mΩ at VGS = 10 V, ID = 13.
5 A Max rDS(on) = 11.
7 mΩ at VGS = 4.
5 V, ID = 11.
5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
Applications
Primary Switch in isolated DC-DC ...