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FDMC86520L


Part Number FDMC86520L
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters usi...
Features
• Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A
• Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and RoHS Compliant Applications
• Primary Switch in Isolated DC−DC
• Synchronous Rectifier
• Load Switch ...

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Datasheet FDMC86520L PDF File








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FDMC86520DC : This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Top Side Cooling PQFN package „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant Applications „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Pin 1 S S S G S S D S G D D D D D Top D D Power 33 Bottom MOSFET Maximum Ratings TA= 25 °.

FDMC86520DC : This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • DUAL COOL Top Side Cooling PQFN Package • Max rDS(on) = 6.3 mW at VGS = 10 V, ID = 17 A • Max rDS(on) = 8.7 mW at VGS = 8 V, ID = 14,5 A • High Performance Technology for Extremely Low rDS(on) • This Device is Pb−Free, Halide Free and RoHS Compliant Applications • Primary DC−DC Switch • Motor Bridge Switch • Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) .

FDMC86520L : This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Top Pin 1 S S S G Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S D MLP 3.3x3.3 MOSFET Maximum Ratings TA.




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