FDMC8878 N-Channel Power Trench®
MOSFET
February 2007
FDMC8878 N-Channel Power Trench®
MOSFET
30V, 16.
5A, 14mΩ Features General Description
Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.
6A Max rDS(on) = 17mΩ at VGS = 4.
5V, ID = 8.
7A Low Profile - 1mm max in Power 33 RoHS Compliant
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This N-Channel
MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8 D 1 D
D
D
D D
5 6 7 8
4 G 3 S 2 S 1 S
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D
S S S G
4
3
2
D
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drai...