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FDMC8878

ON Semiconductor
Part Number FDMC8878
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.5 A, 14 mW This N−Channel MOSFET is a rugged gate version of ON Semicon...
Datasheet PDF File FDMC8878 PDF File

FDMC8878
FDMC8878

Overview
FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.
5 A, 14 mW This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications.
Features • RDS(on) = 14 mW (Max.
) @ VGS = 10 V, ID = 9.
6 A • RDS(on) = 17 mW (Max.
) @ VGS = 4.
5 V, ID = 8.
7 A • Low Profile − 0.
8 mm Max in MLP 3.
3 x 3.
3 • These Devices are Pb−Free and are RoHS Compliant Application • DC − DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS Gate−to−Source Voltage VGS Continuous Drain Current TC = 25°C ID (Package limited) 30 V ±20 V 16.
5 A TC = 25°C 38 (Silicon limited) TA = 25°C 9.
6 (Figure 1) Drain Current Power Dissipation Pulsed TC = 25°C TA = 25°C (Figure 1) ID 60 A PD 31 W 2.
1 Operating and Storage Junction Temperature Range TJ, TSTG − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Figure 1) Symbol RqJC RqJA Value 4 60 Unit °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package FDMC8878 FDMC8878 MLP 3.
3 x 3.
3 www.
onsemi.
com D G S WDFN8 CASE 511DH D5 D6 D7 D8 4G 3S 2S 1S ORDERING INFORMATION See detailed ordering, marking and shipping information on page 1 of this data sheet.
Reel Size 13″ Tape Width 12 mm Quantity 3000 units © Semiconductor Components Industries, LLC, 2012 1 October, 2018 − Rev.
5 Publication Order Number: FDMC8878/D FDMC8878 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS DBVDSS/DTJ Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 2...


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