FDMS3606S PowerTrench® Power Stage
FDMS3606S
PowerTrench® Power Stage
Asymmetric Dual N-Channel
MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.
9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
December 2012
General Description
This device includes two specialized N-Channel
MOSFETs in a dual PQFN package.
The switch node has been internally connect...