FDMS3662

FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Pow...