DatasheetsPDF.com

FDMS3662

ON Semiconductor
Part Number FDMS3662
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 20, 2023
Detailed Description MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsem...
Datasheet PDF File FDMS3662 PDF File

FDMS3662
FDMS3662


Overview
MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.
8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features • Max RDS(on) = 14.
8 mW at VGS = 10 V, ID = 8.
9 A • Advanced Package and Silicon combination for low RDS(on) • Lowers Switching Noise/EMI • MSL1 Robust Package Design • 100% UIL Tested • These Device is Pb−Free and RoHS Compliant Typical Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous TC = 25°C − Continuous TA = 25°C (Note 1a) − Pulsed 100 V ±20 V A 39 8.
9 90 EAS Single Pulse Avalanche Energy (Note 3) 384 mJ PD Power Dissipation TC = 25°C 104 W Power Dissipation TA = 25°C (Note 1a) 2.
5 TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com Pin 1 S S S G D D D D PQFN8 5X6, 1.
27P CASE 483AE S D S D S D G D MARKING DIAGRAM &Z&3&K 3662 &Z = Assembly Plant Code &3 = Numeric Date Code &K = 2−Digit Lot Code 3662 = Specific Device Code ORDERING INFORMATION Device FDMS3662 Package PQFN−8 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016 1 May, 2023 − Rev 4 Publication Order Number: FDMS3662/D FDMS3662 THERMAL CHARACTERISTICS Symbol Parameter RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)