FDMS86101A N-Channel Shielded Gate PowerTrench®
MOSFET
FDMS86101A
N-Channel Shielded Gate PowerTrench®
MOSFET
100 V, 60 A, 8 mΩ
October 2014
Features
General Description
Shielded Gate
MOSFET Technology
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.
5 mΩ at VGS = 6 V, ID = 9.
5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology.
This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
MSL1 robust package design 100% UIL tested 100% Rg tested
A...