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FDMS86101

Fairchild Semiconductor
Part Number FDMS86101
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86101 N-Channel PowerTrench® MOSFET October 2012 FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Feature...
Datasheet PDF File FDMS86101 PDF File

FDMS86101
FDMS86101


Overview
FDMS86101 N-Channel PowerTrench® MOSFET October 2012 FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.
5 mΩ at VGS = 6 V, ID = 9.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ 100% Rg tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 60 12.
4 200 173 104 2.
5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.
2 50 °C/W Package Marking and Ordering Information Device Marking FDMS86101 Device FDMS86101 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.
C8 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheet4u.
com/ FDMS86101 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 80 V,...


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