MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate
150 V, 40 A, 17mW
FDMS86200DC
General Description This N−Channel
MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology.
Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• Shielded Gate
MOSFET Technology • DUAL COOL® Top Side Cooling DFN8 Package • Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.
3 A • Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.
8 A • High Performance Technology for Extremely Low rDS(on) • 100% UIL T...