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FDMS86200DC

Fairchild Semiconductor
Part Number FDMS86200DC
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET July 2015 FDMS86200DC N-Channel Dual CoolTM 56 ...
Datasheet PDF File FDMS86200DC PDF File

FDMS86200DC
FDMS86200DC

Overview
FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET July 2015 FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150 V, 40 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.
3 A „ Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.
8 A „ High performance technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications „ Primary MOSFET in DC - DC converters „ Secondary Synchronous rectifier „ Load switch Pin 1 D D D D S S D D G S S S Pin 1 Top Du...


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