FDMS86252 N-Channel Shielded Gate PowerTrench®
MOSFET
October 2014
FDMS86252
N-Channel Shielded Gate PowerTrench®
MOSFET
150 V, 16 A, 51 mΩ
Features
General Description
Shielded Gate
MOSFET Technology
Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.
6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.
9 A Advanced package and silicon combination for low rDS(on) and
high efficiency
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
A...