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• Shielded Gate MOSFET Technology
• Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
• Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
• Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
• Next Generation Enhanced Body Diode Tec...

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