FDN327N
October 2001
FDN327N
N-Channel 1.
8 Vgs Specified PowerTrench®
MOSFET
General Description
This 20V N-Channel
MOSFET uses Fairchild’s high
voltage PowerTrench process.
It has been optimized for power management applications.
Features
• 2 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.
5 V RDS(ON) = 80 mΩ @ VGS = 2.
5 V RDS(ON) = 120 mΩ @ VGS = 1.
8 V • Low gate charge (4.
5 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON)
Applications
• • • Load switch Battery protection Power management
D
D
S
G S
SuperSOT -3
TM
G
TA=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source
Voltage Gate-Source
Voltage...