DatasheetsPDF.com

FDN327N


Part Number FDN327N
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • 2 A...
Features
• 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V
• Low Gate Charge (4.5 nC typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(on)
• This Device is Pb−Free and Halogen Free Applications
• Load Switch
•...

File Size 289.91KB
Datasheet FDN327N PDF File








Similar Ai Datasheet

FDN327N : This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V • Low gate charge (4.5 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Battery protection Power management D D S G S SuperSOT -3 TM G TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 2 8 0.5.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)