FDS6675A
February 2003
FDS6675A
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel
MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gate drive
voltage ratings (4.
5V – 25V).
Applications
• Power management • Load switch • Battery protection
Features
• –11 A, –30 V
RDS(ON) = 13 mΩ @ VGS = –10 V RDS(ON) = 19 mΩ @ VGS = –4.
5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
54 63 72 81
Absolute Maximum R...