FDS6930B Dual N-Channel Logic Level PowerTrench®
MOSFET
March 2010
FDS6930B Dual N-Channel Logic Level PowerTrench®
MOSFET
Features
■ 5.
5 A, 30 V.
RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.
5 V
■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely
low RDS(ON) ■ High power and current handling capability
General Description
These N-Channel Logic Level
MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low
voltage and battery powered applications where low in-...