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FDS6930B

Kexin
Part Number FDS6930B
Manufacturer Kexin
Description Dual N-Channel MOSFET
Published Mar 10, 2020
Detailed Description SMD Type Dual N-Channel MOSFET FDS6930B (KDS6930B) MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.5 A (VGS = 10V) ● RDS(O...
Datasheet PDF File FDS6930B PDF File

FDS6930B
FDS6930B

Overview
SMD Type Dual N-Channel MOSFET FDS6930B (KDS6930B) MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.
5 A (VGS = 10V) ● RDS(ON) ＜ 38mΩ (VGS = 10V) ● RDS(ON) ＜ 50mΩ (VGS = 4.
5V) ● Fast switching speed ● High power and current handling capability SOP-8 Unit:mm +0.
040.
21 -0.
02 1.
50 0.
15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 54 63 72 81 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current (Note.
1) Symbol VDS VGS ID IDM Power Dissipation Thermal Resistance.
Junction- to-Ambient Thermal Resistance.
Junction- to-Case Junction Temperature Storage Temperature Range (Note.
1) (Note.
2) (Note.
3) (Note.
1) PD RthJA RthJC TJ Tstg Note.
1: 78°C/W when mounted on a 0.
5 in2 pad of 2 oz copper Note.
2: 125°C/W when mounted on a 0.
02 in2 pad of 2 oz copper Note.
3: 135°C/W when mounted on a minimum pad.
Rating 30 ±20 5.
5 20 2 1.
6 1 0.
9 78 40 150 -55 to 150 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET Dual N-Channel MOSFET FDS6930B (KDS6930B) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf trr Qrr IS VSD Test Conditions ID=250μA, VGS=0V VDS=24V, VGS=0V VDS=24V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V VDS=VGS , ID=250uA VGS=10V, ID=5.
5A VGS=10V, ID=5.
5A TJ=125℃ VGS=4.
5V, ID=4.
8A VGS=10V, VDS=5V VDS=5V, ID=5.
5A VGS=0V, VDS=15V, f=1MHz VGS=15V, VDS=0V, f=1MHz VGS=5V, VDS=15...


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