FDS8840NZ N-Channel Power Trench®
MOSFET
April 2009
FDS8840NZ
N-Channel PowerTrench®
MOSFET
40 V, 18.
6 A, 4.
5 mΩ Features
Max rDS(on) = 4.
5 mΩ at VGS = 10 V, ID = 18.
6 A Max rDS(on) = 6.
0 mΩ at VGS = 4.
5 V, ID = 14.
9 A HBM ESD protection level of 6 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant
General Description
The FDS8840NZ has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching perform...