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FDS8840NZ

ON Semiconductor
Part Number FDS8840NZ
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET, N-Channel, POWERTRENCH) 40 V, 18.6 A, 4.5 mW FDS8840NZ General Description The FDS8840NZ has been designed to m...
Datasheet PDF File FDS8840NZ PDF File

FDS8840NZ
FDS8840NZ

Overview
MOSFET, N-Channel, POWERTRENCH) 40 V, 18.
6 A, 4.
5 mW FDS8840NZ General Description The FDS8840NZ has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Features • Max rDS(on) = 4.
5 mW at VGS = 10 V, ID = 18.
6 A • Max rDS(on) = 6.
0 mW at VGS = 4.
5 V, ID = 14.
9 A • HBM ESD Protection Level of 6 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching • High Power and Current Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Buck for Vcore and Server • Notebook Battery Pack • Load Switch www.
onsemi.
com D D D D Pin 1 G S S S SOIC8 CASE 751EB PIN ASSIGNMENT D G D S D S D S MARKING DIAGRAM 8 $Y&Z&2&K FDS 8840NZ 1 $Y &Z &2 &K FDS8840NZ = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018 1 October, 2019 − Rev.
0 Publication Order Number: FDS8840NZ/D FDS8840NZ ORDERING INFORMATION Part Number Device Marking Package Shipping† FDS8840NZ FDS8840NZ SOIC8 (Pb-Free / Halogen Free) 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current Continuous Drain Current Pulsed 40 V ±20 V 18.
6 A 63 EAS Single Pulse Avalanche Energy (Note 4) 600 mJ PD Power Dissipation, TA = 25°C (Note 1a) 2.
5 W Power Dissipation, TA = 25°C (Note 1b) 1.
0 TJ, TSTG Operating and Stora...


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