SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic PARTMARKING DETAILS 614
FMMT614
E
C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Sustaining
Voltage Emitter-Base Breakdown
Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO MIN.
120 100 10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP.
300 130 14 0.
02 10 10 100 0.
9 0.
78 1.
7 1.
5 15K 5K 6 0.
7 2.
5 pF...