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FMMT619

UTC
Part Number FMMT619
Manufacturer UTC
Description BIPOLAR POWER TRANSISTOR
Published Apr 20, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD FMMT619 NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATION...
Datasheet PDF File FMMT619 PDF File

FMMT619
FMMT619

Overview
UNISONIC TECHNOLOGIES CO.
, LTD FMMT619 NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * DC-DC / DC-AC Modules * Regulator * LED driver * CCFL Backlighting Inverters  ORDERING INFORMATION Ordering Number Lead Free Halogen Free FMMT619G-AE3-6-R FMMT619G-AE3-6-R Note: Pin Assignment: B: Base E: Emitter C: Collector Package SOT-23 Pin Assignment 123 BEC Packing Tape Reel  MARKING T619 www.
unisonic.
com.
tw Copyright © 2017 unisonic Technologies Co.
, Ltd 1 of 4 QW-R207-032.
a FMMT619 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 125 V Collector-Emitter Voltage VCEO 125 V Emitter-Base Voltage VEBO 5V Collector Current IC 1 A Collector Peak Current lC(PEAK) 3 A Base Current IB 0.
5 A Power Dissipation PD 0.
35 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC RATINGS 110  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) UNIT °C/W PARAMETER OFF CHARACTERISTICS Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Rise Time Storage Time Fall Time Note: Pulse test.
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVCBO BVCEO BVEBO ICBO IEBO IC=1mA, IE=0 IC=10mA, RBE= IE=1mA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 125 V 125 V 5V 0.
5 μA 0.
1 μA hFE1 hFE2 VCE(SAT) VBE(SAT) VBE VCE=5V,...


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