FQA10N80C_F109 — N-Channel QFET®
MOSFET
FQA10N80C_F109
N-Channel QFET®
MOSFET
800 V, 10 A, 1.
1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ.
44 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested • RoHS compliant
March 2014
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...