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FQA10N80C-F109

ON Semiconductor
Part Number FQA10N80C-F109
Manufacturer ON Semiconductor
Description N-Channel QFET MOSFET
Published Nov 29, 2018
Detailed Description FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V...
Datasheet PDF File FQA10N80C-F109 PDF File

FQA10N80C-F109
FQA10N80C-F109

Overview
FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.
1 Ω Features • 10 A, 800 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ.
44 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G D S TO-3PN G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gate to Sour...


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