FQAF11N90C — N-Channel QFET®
MOSFET
FQAF11N90C
N-Channel QFET®
MOSFET
900 V, 7.
0 A, 1.
1 Ω
December 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 7.
0 A, 900 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 3.
5 A
• Low Gate Charge (Typ.
60 nC)
• Low Crss (Typ.
23 pF)
• 100% Avalan...