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FQAF11N90

Fairchild Semiconductor
Part Number FQAF11N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQAF11N90 September 2000 QFET FQAF11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode pow...
Datasheet PDF File FQAF11N90 PDF File

FQAF11N90
FQAF11N90

Overview
FQAF11N90 September 2000 QFET FQAF11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 7.
2A, 900V, RDS(on) = 0.
96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G...


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