FQB13N50 / FQI13N50
March 2001
QFET
FQB13N50 / FQI13N50
500V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.
D
TM
Features
• • • • • • 12.
5A, 500V.
RDS(on) = 0.
43Ω @VGS = 10 V Low gate charge ( typical 45 nC).
Low Crss ( typ...