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FQI13N50C

Fairchild Semiconductor
Part Number FQI13N50C
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode...
Datasheet PDF File FQI13N50C PDF File

FQI13N50C
FQI13N50C

Overview
FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM Features • • • • • • 13A, 500V, RDS(on) = 0.
48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Vo...


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