FQP65N06
®
FQP65N06
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power
MOSFET
Features
• 65A, 60V, RDS(on) = 0.
016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
1.
Gate {
{ 2.
Drain
●
◀▲
● ●
{ 3.
Source
BVDSS = 60V RDS(ON) = 0.
016 ohm ID = 65A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
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