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FQP65N06

Fairchild Semiconductor
Part Number FQP65N06
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP65N06 May 2001 QFET FQP65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field ...
Datasheet PDF File FQP65N06 PDF File

FQP65N06
FQP65N06

Overview
FQP65N06 May 2001 QFET FQP65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM Features • • • • • • • 65A, 60V, RDS(on) = 0.
016Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP65N06 60 65 46.
1 260 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 650 65 15.
0 7.
0 150 1.
00 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
5 -Max 1.
00 -62.
5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A1.
May 2001 FQP65N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics...


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