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FTD2003
N- Channel Silicon MOS FET Very High Speed-Switchng
TENTATIVE
Features • Low ON-state resistance.
• 2.
5V drive.
• Mount height of 1.
1mm.
• Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source
Voltage Gate to Source
Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate to Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitan...