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FTD2007

Sanyo Semicon Device
Part Number FTD2007
Manufacturer Sanyo Semicon Device
Description Ultrahigh-Speed Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number:ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features · Low ON resi...
Datasheet PDF File FTD2007 PDF File

FTD2007
FTD2007

Overview
Ordering number:ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features · Low ON resistance.
· 4V drive.
· Mounting height 1.
1mm.
· Composite type, facilitating high-density mounting.
Package Dimensions unit:mm 2155A [FTD2007] 0.
65 8 0.
95 3.
0 5 0.
425 4.
5 6.
4 1 0.
25 4 (0.
95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.
1 1.
0 0.
5 1 : Drain1 2 : Source1 3 : Source1 0.
125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Ratings 100 ±20 0.
8 3.
2 2 Unit V V A A W W ˚C ˚C Mounted on a ceramic board (1000mm ×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm) 0.
6 0.
8 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown ...


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