GOFORD
General Description
The G1007.
combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for
power switching application and LED backlighting.
Features
VDSS 100V
RDS(ON) @10V (typ)
70mΩ
ID 7A
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Power switching application ● LED backlighting
G1007.
Schematic Diagram Marking and pin Assignment
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source
Voltage (VGS=0V)
VGS Gate-Source
Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse) PD EAS
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Cur...