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G1003A

Part Number	G1003A
Manufacturer	GFD
Description	Transistor
Published	Jan 6, 2019
Detailed Description	Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It ...
Datasheet	G1003A PDF File

Overview

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protected.
General Features ● VDS = 100V,ID = 5A RDS(ON) < 145mΩ @ VGS=10V (Typ:135 mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G1003A D G S Schematic diagram SOT23-3L view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VG...

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