GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.
23 μs (typ.
) (IC = 40 A) FRD: trr = 0.
7 μs (typ.
) (di/dt = −20 A/μs) Low saturation
voltage: VCE (sat) = 3.
7 V (typ.
) (IC = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter
voltage Gate-emitter
voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55 to 150 Unit V V A
Diode forward current
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Collector power dissipation (T...