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GT40T301

Toshiba Semiconductor
Part Number GT40T301
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switchin...
Datasheet PDF File GT40T301 PDF File

GT40T301
GT40T301

Overview
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.
25 µs (typ.
) (IC = 40 A) FRD : trr = 0.
7 µs (typ.
) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.
7 V (typ.
) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55~150 Unit V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipati...


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