Discrete IGBTs Silicon N-Channel IGBT
GT50N324
1.
Applications
• Dedicated to
Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2.
Features
(1) Sixth generation (2) Enhancement mode (3) High-speed switching:
IGBT tf = 0.
11 µs (typ.
) (IC = 60 A) FRD trr = 0.
8 µs (typ.
) (di/dt = -20 A/µs) (4) Low saturation
voltage: VCE(sat) = 1.
9 V (typ.
) (IC = 60 A) (5) FRD included between emitter and collector
3.
Packaging and Internal Circuit
GT50N324
TO-3P(N)
1: Gate 2: Collector 3: Emitter
©2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2008-03
2019-11-18 Rev.
2.
0
GT50N324
4.
...