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GT50N322A

Toshiba Semiconductor
Part Number GT50N322A
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switchi...
Datasheet PDF File GT50N322A PDF File

GT50N322A
GT50N322A

Overview
GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • • • • FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.
10 μs (typ.
) (IC = 60 A) FRD : trr = 0.
8 μs (typ.
) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 2.
2 V (typ.
) (IC = 60 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1000 ± 25 50 120 15 120 156 150 −55 to 150 Unit V V A JEDEC A ⎯ ⎯ 2-16C1C Diode forward current Collector power dissipat...


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