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HAT2279N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.
2.
00 Jul.
05.
2005
Features
• High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.
8 mΩ typ.
(at VGS = 10 V) • Lead Free
Outline
LFPAK-i
5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G)
4 G
8(D) 7(D) 6(D) 5(D)
2X XX
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Rev.
2.
00, Jul.
05.
2005, page 1 of 4
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HAT2279N
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel d...